The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Aug. 31, 2005
Jen-ren Huang, Tainan County, TW;
Cheng-ming Weng, Hsinchu County, TW;
Miao-chun Lin, Tainan County, TW;
Jen-Ren Huang, Tainan County, TW;
Cheng-Ming Weng, Hsinchu County, TW;
Miao-Chun Lin, Tainan County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A dual damascene structure is described, including a substrate, a dielectric layer, a hard mask layer, a contact and a conductive line. The dielectric layer is located on the substrate, the hard mask layer is on the dielectric layer, the contact is located in the dielectric layer, and a horizontal cross-section of the contact has an asymmetrically rounded outline. The conductive line is in the hard mask layer and the dielectric layer, and is located on and electrically connected to the contact. The conductive line has a laterally swelling portion on an edge portion of the first contact, wherein the borders of the laterally swelling portion and the edge portion are contiguous.