The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Apr. 19, 2004
Xiaoqiang Sean Yao, San Jose, CA (US);
Bi-ming Yen, Fremont, CA (US);
Taejoon Han, Pleasanton, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Xiaoqiang Sean Yao, San Jose, CA (US);
Bi-Ming Yen, Fremont, CA (US);
Taejoon Han, Pleasanton, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber wherein the wafer has a barrier layer over the wafer and a dielectric layer over the barrier layer. The dielectric layer is etched. The barrier layer is opened. The wafer is removed from the etch chamber. A waferless automatic cleaning of the etch chamber without the wafer is provided. The waferless automatic cleaning comprises providing a waferless automatic cleaning gas comprising oxygen and nitrogen to the etch chamber and forming a waferless automatic cleaning plasma from the waferless automatic cleaning gas to clean the etch chamber.