The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Sep. 26, 2003
Adrianne K. Tipton, Fremont, CA (US);
Brian G. LU, Fremont, CA (US);
Patrick A. Van Cleemput, Sunnyvale, CA (US);
Michelle T. Schulberg, Palo Alto, CA (US);
Qingguo Wu, Tualatin, OR (US);
Haiying Fu, West Linn, OR (US);
Feng Wang, Fremont, CA (US);
Adrianne K. Tipton, Fremont, CA (US);
Brian G. Lu, Fremont, CA (US);
Patrick A. Van Cleemput, Sunnyvale, CA (US);
Michelle T. Schulberg, Palo Alto, CA (US);
Qingguo Wu, Tualatin, OR (US);
Haiying Fu, West Linn, OR (US);
Feng Wang, Fremont, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-oxidative conditions are described. The methods described may be used to remove porogen from porogen-containing precursor films. The porogen may be a hydrocarbon such as a terpene (e.g., alpha-terpinene) or a norbornene (e.g., ENB). The resulting porous low-k dielectric matrix can then be annealed to remove water and remaining silanols capped to protect it from degradation by ambient conditions, which methods will also be described.