The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Jul. 08, 2003
Hariklia Deligianni, Tenafly, NJ (US);
Panayotis Andricacos, Croton on Hudson, NY (US);
L. Paivikki Buchwalter, Hopewell Junction, NY (US);
John M. Cotte, New Fairfield, NY (US);
Christopher Jahnes, Upper Saddle River, NJ (US);
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
John H. Magerlein, Yorktown Heights, NY (US);
Kenneth Stein, Sandy Hook, CT (US);
Richard P. Volant, New Fairfield, CT (US);
James A. Tornello, Cortlandt Manor, NY (US);
Jennifer Lund, Brookeville, MD (US);
Hariklia Deligianni, Tenafly, NJ (US);
Panayotis Andricacos, Croton on Hudson, NY (US);
L. Paivikki Buchwalter, Hopewell Junction, NY (US);
John M. Cotte, New Fairfield, NY (US);
Christopher Jahnes, Upper Saddle River, NJ (US);
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
John H. Magerlein, Yorktown Heights, NY (US);
Kenneth Stein, Sandy Hook, CT (US);
Richard P. Volant, New Fairfield, CT (US);
James A. Tornello, Cortlandt Manor, NY (US);
Jennifer Lund, Brookeville, MD (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.