The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Feb. 16, 2005
Son Nguyen, Yorktown Heights, NY (US);
Sarah L. Lane, Wappingers Falls, NY (US);
Jia Lee, Fremont, CA (US);
Kensaku Ida, Wappingers Falls, NY (US);
Darryl D. Restaino, Modena, NY (US);
Takeshi Nogami, Hartsdale, NY (US);
Son Nguyen, Yorktown Heights, NY (US);
Sarah L. Lane, Wappingers Falls, NY (US);
Jia Lee, Fremont, CA (US);
Kensaku Ida, Wappingers Falls, NY (US);
Darryl D. Restaino, Modena, NY (US);
Takeshi Nogami, Hartsdale, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter 'SiCOH') in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH+CHstretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCHbonding of greater than about 2.0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.