The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
May. 09, 2005
Cheng-ming Weng, Hsin-Chu Hsien, TW;
Miao-chun Lin, Tainan Hsien, TW;
Chun-jen Huang, Tainan Hsien, TW;
Cheng-Ming Weng, Hsin-Chu Hsien, TW;
Miao-Chun Lin, Tainan Hsien, TW;
Chun-Jen Huang, Tainan Hsien, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A low-k dielectric film is deposited on the wafer. A metal layer is then deposited over the low-k dielectric film. A resist pattern is formed over the metal layer. The resist pattern is then transferred to the underlying metal layer to form a metal pattern. The resist pattern is stripped off. A through hole is plasma etched into the low-k dielectric film by using the metal pattern as a hard mask. The plasma etching causes residues to deposit within the through hole. A first wet treatment is then performed to soften the residues. A plasma dry treatment is carried out to crack the residues. A second wet treatment is performed to completely remove the residues.