The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Aug. 24, 2004
Kunal R. Parekh, Boise, ID (US);
Chandra V. Mouli, Boise, ID (US);
M. Ceredig Roberts, Boise, ID (US);
Fernando Gonzalez, Boise, ID (US);
Kunal R. Parekh, Boise, ID (US);
Chandra V. Mouli, Boise, ID (US);
M. Ceredig Roberts, Boise, ID (US);
Fernando Gonzalez, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes methods of forming and/or passivating semiconductor constructions. In particular aspects, various oxides of a semiconductor substrate can be formed by exposing semiconductive material of the substrate to deuterium-enriched steam. In other aspects, a semiconductor construction is passivated by subjecting the construction to an anneal at a temperature of greater than or equal to 350° C. while exposing the construction to a deuterium-enriched ambient.