The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Jun. 08, 2004
Jeong-sik Choi, Seoul, KR;
Jung-hee Chung, Seoul, KR;
Woo-gwan Shim, Gyeonggi-do, KR;
Young-sun Kim, Gyeonggi-do, KR;
Jae-hyoung Choi, Gyeonggi-do, KR;
Se-hoon OH, Gyeonggi-do, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Jeong-Sik Choi, Seoul, KR;
Jung-Hee Chung, Seoul, KR;
Woo-Gwan Shim, Gyeonggi-do, KR;
Young-Sun Kim, Gyeonggi-do, KR;
Jae-Hyoung Choi, Gyeonggi-do, KR;
Se-Hoon Oh, Gyeonggi-do, KR;
Cha-Young Yoo, Gyeonggi-do, KR;
Abstract
Embodiments of the present invention include methods of forming a contact to a capacitor in a semiconductor device. A metal silicide layer is formed at a top surface of a conductive plug of the semiconductor device that is coupled to a bottom electrode of the capacitor to provide an ohmic contact therebetween. Forming a metal silicide layer may include exposing a surface of the conductive plug, depositing a metal layer of the bottom electrode on the exposed surface of the conductive plug and thermally processing the semiconductor device to react a part of the deposited metal layer and the conductive plug to form the metal silicide layer. Methods of forming a semiconductor device including a capacitor having a metal silicide layer connecting a bottom electrode of the capacitor and a conductive plug are also provided.