The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2007

Filed:

Jul. 03, 2002
Applicants:

Stephan Alan Cohen, Wappingers Falls, NY (US);

Fenton Read Mcfeely, Ossining, NY (US);

Cevdet Ismail Noyan, Yorktown Heights, NY (US);

Kenneth Parker Rodbell, Poughguag, NY (US);

Robert Rosenberg, Peekskill, NY (US);

John Jacob Yurkas, Stamford, CT (US);

Inventors:

Stephan Alan Cohen, Wappingers Falls, NY (US);

Fenton Read McFeely, Ossining, NY (US);

Cevdet Ismail Noyan, Yorktown Heights, NY (US);

Kenneth Parker Rodbell, Poughguag, NY (US);

Robert Rosenberg, Peekskill, NY (US);

John Jacob Yurkas, Stamford, CT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO), as the source material.


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