The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Dec. 01, 2004
Amir Al-bayati, San Jose, CA (US);
Rick J. Roberts, San Jose, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Ken Macwilliams, Portland, OR (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Biagio Gallo, Palo Alto, CA (US);
Andrew Nguyen, San Jose, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Rick J. Roberts, San Jose, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Ken MacWilliams, Portland, OR (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Biagio Gallo, Palo Alto, CA (US);
Andrew Nguyen, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.