The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Jan. 07, 2005
Zhen-cheng Wu, Hsinchu, TW;
Cheng-hung Chang, Hsinchu, TW;
Yu-lien Huang, Jhubei, TW;
Shwang-ming Cheng, Hsinchu, TW;
Zhen-Cheng Wu, Hsinchu, TW;
Cheng-Hung Chang, Hsinchu, TW;
Yu-Lien Huang, Jhubei, TW;
Shwang-Ming Cheng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Disclosed herein are various embodiments of semiconductor devices and related methods of manufacturing a semiconductor device. In one embodiment, a method includes providing a semiconductor substrate and forming a metal silicide on the semiconductor substrate. In addition, the method includes treating an exposed surface of the metal silicide with a hydrogen/nitrogen-containing compound to form a treated layer on the exposed surface, where the composition of the treated layer hinders oxidation of the exposed surface. The method may then further include depositing a dielectric layer over the treated layer and the exposed surface of the metal silicide.