The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Nov. 12, 2004
Hitoshi Kato, Esashi, JP;
Kohei Fukushima, Esashi, JP;
Atsushi Endo, Nirasaki, JP;
Tatsuo Nishita, Esashi, JP;
Takeshi Kumagai, Esashi, JP;
Hitoshi Kato, Esashi, JP;
Kohei Fukushima, Esashi, JP;
Atsushi Endo, Nirasaki, JP;
Tatsuo Nishita, Esashi, JP;
Takeshi Kumagai, Esashi, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
A thermal processing system () includes a reaction vessel () capable of forming a silicon nitride film on semiconductor wafers () through interaction between hexachlorodisilane and ammonia, and an exhaust pipe () connected to the reaction vessel (). The reaction vesselis heated at a temperature in the range of 500 to 900° C. and the exhaust pipe () is heated at 100° C. before disassembling and cleaning the exhaust pipe. Ammonia is supplied through a process gas supply pipe () into the reaction vessel (), and the ammonia is discharged from the reaction vessel () into the exhaust pipe ().