The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Aug. 20, 2003
Yasuyoshi Hyodo, Tama, JP;
Nobuo Matsuki, Tama, JP;
Masashi Yamaguchi, Tama, JP;
Atsuki Fukazawa, Tama, JP;
Naoki Ohara, Tama, JP;
Yijun Liu, Phoenix, AZ (US);
Yasuyoshi Hyodo, Tama, JP;
Nobuo Matsuki, Tama, JP;
Masashi Yamaguchi, Tama, JP;
Atsuki Fukazawa, Tama, JP;
Naoki Ohara, Tama, JP;
Yijun Liu, Phoenix, AZ (US);
ASM Japan K.K., Tokyo, JP;
Abstract
A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.