The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Aug. 14, 2003
Applicants:
Naoto Tsuji, Tama, JP;
Atsuki Fukazawa, Tama, JP;
Nobuo Matsuki, Tama, JP;
Shingo Ikeda, Tama, JP;
Inventors:
Assignee:
ASM Japan K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); B05D 3/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing multiple cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed. The insulation film is then exposed to electron beam radiation, thereby increasing mechanical strength of the film without substantial alternation of its dielectric constant.