The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Nov. 18, 2003
Tien-jen Cheng, Bedford, NY (US);
David E. Eichstadt, North Salem, NY (US);
Jonathan H. Griffith, Lagrangeville, NY (US);
Sarah H. Knickerbocker, Hopewell Junction, NY (US);
Rosemary A. Previti-kelly, Burlington, VT (US);
Roger A. Quon, Rhinebeck, NY (US);
Kamalesh K. Srivastava, Wappingers Falls, NY (US);
Keith Kwong-hon Wong, Wappingers Falls, NY (US);
Tien-Jen Cheng, Bedford, NY (US);
David E. Eichstadt, North Salem, NY (US);
Jonathan H. Griffith, Lagrangeville, NY (US);
Sarah H. Knickerbocker, Hopewell Junction, NY (US);
Rosemary A. Previti-Kelly, Burlington, VT (US);
Roger A. Quon, Rhinebeck, NY (US);
Kamalesh K. Srivastava, Wappingers Falls, NY (US);
Keith Kwong-Hon Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for selective electroplating of a semiconductor input/output (I/O) pad includes forming a titanium-tungsten (TiW) layer over a passivation layer on a semiconductor substrate, the TiW layer further extending into an opening formed in the passivation layer for exposing the I/O pad, such that the TiW layer covers sidewalls of the opening and a top surface of the I/O pad. A seed layer is formed over the TiW layer, and portions of the seed layer are selectively removed such that remaining seed layer material corresponds to a desired location of interconnect metallurgy for the I/O pad. At least one metal layer is electroplated over the remaining seed layer material, using the TiW layer as a conductive electroplating medium.