The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7141853 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 28, 2006

Filed:

Apr. 27, 2004
Applicants:

John E. Campbell, Wappingers Falls, NY (US);

William T. Devine, Ulster Park, NY (US);

Kris V. Srikrishnan, Wappingers Falls, NY (US);

Inventors:

John E. Campbell, Wappingers Falls, NY (US);

William T. Devine, Ulster Park, NY (US);

Kris V. Srikrishnan, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device. Entire circuits can be designed around this technique.

Published as:
US2002185684A1; WO02101825A1; KR20040012916A; EP1402573A1; US6759282B2; JP2004530308A; CN1535478A; US2005029592A1; US2005214988A1; TWI255506B; CN1263121C; US7141853B2; KR100650419B1; US2007128784A1; US7320918B2; JP4195371B2; US7491588B2; EP1402573A4;

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