The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Jun. 12, 2001
Applicant:
Inventors:
John E. Campbell, Wappingers Falls, NY (US);
William T. Devine, Ulster Park, NY (US);
Kris V. Srikrishnan, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/701 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/701 ;
Abstract
A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device. Entire circuits can be designed around this technique.
Published as:
US2002185684A1; WO02101825A1; KR20040012916A; EP1402573A1; US6759282B2; JP2004530308A; CN1535478A; US2005029592A1; US2005214988A1; TWI255506B; CN1263121C; KR100650419B1; US7141853B2; US2007128784A1; US7320918B2; JP4195371B2; US7491588B2; EP1402573A4;