The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Apr. 03, 2003
Applicants:
Chin-lung Lin, Hsin-Chu Hsien, TW;
Chuen-huei Yang, Taipei, TW;
Ming-jui Chen, Hsin-Chu, TW;
Wen-tien Hung, Taipei, TW;
Inventors:
Chin-Lung Lin, Hsin-Chu Hsien, TW;
Chuen-Huei Yang, Taipei, TW;
Ming-Jui Chen, Hsin-Chu, TW;
Wen-Tien Hung, Taipei, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase shift mask includes a transparent substrate, a semi-dense pattern, and a dense pattern. The semi-dense pattern is formed on the transparent substrate including a plurality of phase shift regions and non-phase shift regions arranged successively. The dense pattern is formed on the transparent substrate including a plurality of non-phase shift regions, phase shift regions, and non-transparent regions.