The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2006

Filed:

Aug. 23, 2004
Applicants:

Wu-an Weng, Hsinchu, TW;

Wang-tsai Hsu, Hsinchu, TW;

Kun-yu Liu, Hsinchu, TW;

Yi-chieh Lai, Hsinchu, TW;

Inventors:

Wu-An Weng, Hsinchu, TW;

Wang-Tsai Hsu, Hsinchu, TW;

Kun-Yu Liu, Hsinchu, TW;

Yi-Chieh Lai, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); G01N 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention describes a method to facilitate the use of low-sensitivity monitoring equipment for detecting and monitoring defects on the surface of semiconductor wafers. The method includes the use of a hydrofluoric acid solution for increasing the dimensions of a defect and the application of a thin-film layer of a metal, such as titanium, for improving the appearance of the defect such that the defect dimensions increase to above 0.1 nanometer, the detection threshold for economical low-sensitivity monitoring equipment.


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