The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2006

Filed:

Nov. 12, 2004
Applicants:

Petrus Rutgerus Bartray, Ysselsteyn, NL;

Wilhelmus Josephus Box, Eksel, NL;

Carlo Cornelis Maria Luijten, Duizel, NL;

Bernardus Antonius Johannes Luttikhuis, Nuenen, NL;

Michael Ten Bhomer, Veghel, NL;

Ferdy Migchelbrink, Amersfoort, NL;

Jan Jaap Kuit, Veldhoven, NL;

Inventors:

Petrus Rutgerus Bartray, Ysselsteyn, NL;

Wilhelmus Josephus Box, Eksel, NL;

Carlo Cornelis Maria Luijten, Duizel, NL;

Bernardus Antonius Johannes Luttikhuis, Nuenen, NL;

Michael Ten Bhomer, Veghel, NL;

Ferdy Migchelbrink, Amersfoort, NL;

Jan Jaap Kuit, Veldhoven, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01); G03B 27/58 (2006.01); G03B 27/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

A lithographic apparatus is provided that includes an illumination system for conditioning a beam of radiation, and a support for supporting a patterning device. The patterning device serves to impart the beam of radiation with a pattern in its cross-section. The apparatus also includes a substrate table for holding a substrate, a projection system for projecting the patterned beam onto a target portion of the substrate, an isolated reference frame for providing a reference surface, and a measuring system for measuring the substrate with respect to the reference surface. The reference frame includes a material having a coefficient of thermal expansion of greater than about 2.9×10/K.


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