The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
May. 12, 2004
Bradley P. Jones, Pleasant Valley, NY (US);
Christian Lavoie, Ossining, NY (US);
Robert J. Purtell, Mohegan Lake, NY (US);
Yun-yu Wang, Poughquag, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Bradley P. Jones, Pleasant Valley, NY (US);
Christian Lavoie, Ossining, NY (US);
Robert J. Purtell, Mohegan Lake, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a metal silicide contact for a semiconductor device includes forming a refractory metal layer over a substrate, including active and non-active area of said substrate, and forming a cap layer over the refractory metal layer. A counter tensile layer is formed over the cap layer, wherein the counter tensile layer is selected from a material such that an opposing directional stress is created between the counter tensile layer and the cap layer, with respect to a directional stress created between the refractory metal layer and the cap layer.