The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Oct. 18, 2004
Hui Lin Chang, Hsin-Chu, TW;
Yung Cheng LU, Taipei, TW;
LI Ping LI, Hsinchu, TW;
Tien I Bao, HsinChu, TW;
Chih Hsien Lin, Tainan, TW;
Hui Lin Chang, Hsin-Chu, TW;
Yung Cheng Lu, Taipei, TW;
Li Ping Li, Hsinchu, TW;
Tien I Bao, HsinChu, TW;
Chih Hsien Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A damascene structure and method for forming the same in a multi-density dielectric insulating layer the method including providing a substrate; forming at least a first layer comprising silicon oxide according to a first process having a first density; forming at least a second layer comprising silicon oxide according to a second process over the first layer having a second density less than the first density; etching a damascene opening through a thickness portion of the at least a first and the at least a second layer; and, filling the damascene opening to form a metal filled damascene.