The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Oct. 14, 2003
Johannes Kaeppeler, Würselen, DE;
Michael Heuken, Aachen, DE;
Rainer Beccard, Aachen, DE;
Gerhard Karl Strauch, Aachen, DE;
Johannes Kaeppeler, Würselen, DE;
Michael Heuken, Aachen, DE;
Rainer Beccard, Aachen, DE;
Gerhard Karl Strauch, Aachen, DE;
Aixtron AG, , DE;
Abstract
The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; one or more heated sources where a gaseous halide is formed by chemical reaction of a halogen, especially HCl, fed to the source together with a substrate gas, and a metal, for example GA, In, Al associated with the source, which is transported through a gas inlet section to a substrate supported by the substrate support; and a hydride supply for supplying a hydride, especially NH, AsHor PHinto the reaction chamber. A plurality of rotationally driven substrate supports is disposed in an annular arrangement on a substrate support carrier, the sources being disposed in the center of said substrate carrier.