The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Mar. 02, 2004
Thorsten Kammler, Ottendorf-Okrilla, DE;
Karsten Wieczorek, Dresden, DE;
Matthias Schaller, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Karsten Wieczorek, Dresden, DE;
Matthias Schaller, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
By maintaining the gate electrode covered during the process flow for forming metal silicide regions in the drain and source of a field effect transistor, an appropriate metal silicide may be formed on the gate electrode which meets the requirement for aggressive gate length scaling. Preferably, a nickel silicide is formed on the gate electrode, whereas the drain and source regions receive the well-established cobalt disilicide. Additionally, the gate electrode dopant profile is effectively decoupled from the drain and source dopant profile.