The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Oct. 15, 2003
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Anita Madan, Danbury, CT (US);
Woo-hyeong Lee, Poughquag, NY (US);
Gregory Wayne Dibello, Mahopac, NY (US);
Ramaseshan Suryanarayanan Iyer, Santa Clara, CA (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Anita Madan, Danbury, CT (US);
Woo-Hyeong Lee, Poughquag, NY (US);
Gregory Wayne Dibello, Mahopac, NY (US);
Ramaseshan Suryanarayanan Iyer, Santa Clara, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A compound that includes at least Si, N and C in any combination, such as compounds of formula (R—NH)SiXwherein R is an alkyl group (which may be the same or different), n is 1, 2 or 3, and X is H or halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be mixed with silane or a silane derivative to produce a film. A polysilicon silicon film may be grown by mixing silane (SiH) or a silane derviative and a compound including Si, N and C, such as BTBAS. Films controllably doped with carbon and/or nitrogen (such as layered films) may be grown by varying the reagents and conditions.