The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
May. 28, 2004
Satoshi Sakai, Yokohama, JP;
Daichi Matsumoto, Hamura, JP;
Katsuyuki Asaka, Hamura, JP;
Masatoshi Hasegawa, Hamura, JP;
Kazutaka Mori, Kokubunji, JP;
Satoshi Sakai, Yokohama, JP;
Daichi Matsumoto, Hamura, JP;
Katsuyuki Asaka, Hamura, JP;
Masatoshi Hasegawa, Hamura, JP;
Kazutaka Mori, Kokubunji, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Mutual diffusion of impurities in a gate electrode is suppressed near a boundary between an n-channel type MISFET and a p-channel type MISFET, which adopt a polycide's dual-gate structure. Since a gate electrode of an n-channel type MISFET and a gate electrode of a p-channel type MISFET are of mutually different conductivity types, they are separated to prevent the mutual diffusion of the impurities and are electrically connected to each other via a metallic wiring formed in the following steps. In a step before a gate electrode material is patterned to separate the gate electrodes, the mutual diffusion of the impurities before forming the gate electrodes is prevented by performing no heat treatment at a temperature of 700° C. or higher.