The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Dec. 16, 2004
Applicants:
Ji Soo Kim, Pleasanton, CA (US);
Sangheon Lee, Sunnyvale, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Inventors:
Ji Soo Kim, Pleasanton, CA (US);
Sangheon Lee, Sunnyvale, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Assignee:
LAM Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming dual damascene features in a dielectric layer. Vias are partially etched in the dielectric layer. A trench pattern mask is formed over the dielectric layer. Trenches are partially etched in the dielectric layer. The trench pattern mask is stripped. The dielectric layer is further etched to complete etch the vias and the trenches in the dielectric layer.