The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Jan. 19, 2004
Applicants:
Hitoshi Kato, Tokyo, JP;
Koichi Orito, Tokyo, JP;
Hiroyuki Kikuchi, Tokyo, JP;
Shingo Maku, Tokyo, JP;
Inventors:
Hitoshi Kato, Tokyo, JP;
Koichi Orito, Tokyo, JP;
Hiroyuki Kikuchi, Tokyo, JP;
Shingo Maku, Tokyo, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).