The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Jan. 20, 2004
Keng-chu Lin, Ping-Tung, TW;
Hui-lin Chang, Hsin-Chu, TW;
I-i Chen, Taipei, TW;
Yung-chen LU, Taipei, TW;
Syun-ming Jeng, Hsin-Chu, TW;
Keng-Chu Lin, Ping-Tung, TW;
Hui-Lin Chang, Hsin-Chu, TW;
I-I Chen, Taipei, TW;
Yung-Chen Lu, Taipei, TW;
Syun-Ming Jeng, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for plasma treating an exposed copper surface and dielectric insulating layer in a semiconductor device manufacturing process including providing a semiconductor wafer having a process surface including an exposed copper portion and an exposed dielectric insulating layer portion; plasma treating in a first plasma treatment process, the process surface with a first plasma including ammonia (NH) and nitrogen (N) plasma to form a copper nitride layer overlying the exposed copper portion; and, plasma treating in a second plasma treatment process the process surface with a second plasma including oxygen (O).