The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Oct. 14, 2003
Kaushik Kumar, Beacon, NY (US);
Timothy Dalton, Ridgefield, CT (US);
Larry Clevenger, LaGrangeville, NY (US);
Andy Cowley, Wappingers Falls, NY (US);
Douglas C. LA Tulipe, Danbury, CT (US);
Mark Hoinkis, Fishkill, NY (US);
Chih-chao Yang, Beacon, NY (US);
Yi-hsiung Lin, Wappingers Falls, NY (US);
Erdem Kaltalioglu, Hsin-Chu, TW;
Markus Naujok, Hsin-Chu, TW;
Jochen Schacht, Hsin-Chu, TW;
Kaushik Kumar, Beacon, NY (US);
Timothy Dalton, Ridgefield, CT (US);
Larry Clevenger, LaGrangeville, NY (US);
Andy Cowley, Wappingers Falls, NY (US);
Douglas C. La Tulipe, Danbury, CT (US);
Mark Hoinkis, Fishkill, NY (US);
Chih-Chao Yang, Beacon, NY (US);
Yi-Hsiung Lin, Wappingers Falls, NY (US);
Erdem Kaltalioglu, Hsin-Chu, TW;
Markus Naujok, Hsin-Chu, TW;
Jochen Schacht, Hsin-Chu, TW;
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A dual damascene structure and method of fabrication thereof. An insulating layer comprises a first dielectric material and a second dielectric material, the second dielectric material being different from the first dielectric material. First conductive regions having a first pattern are formed in the first dielectric material, and second conductive regions having a second pattern are formed in the second dielectric material, the second pattern being different from the first pattern. One of the first dielectric material and the second dielectric material comprises an organic material, and the other dielectric material comprises an inorganic material. One of the first and second dielectric materials is etchable selective to the other dielectric material. A method of cleaning a semiconductor wafer processing chamber while a wafer remains residing within the chamber is also disclosed.