The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Oct. 30, 2003
Juing-yi Cheng, Chi-Shan, TW;
Chien-hao Chen, Juangwei Shiang, TW;
Juing-Yi Cheng, Chi-Shan, TW;
Chien-Hao Chen, Juangwei Shiang, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A new method is provided for manufacturing a gate electrode. A layer of gate material, such as polysilicon, is deposited, patterned and etched, defining the poly gate electrode structure. LDD and pocket impurity implants are performed, the LDD profile is created by a rapid thermal anneal. Next and of critical importance to the invention, a Nor Oor Nbased plasma treatment is performed to eliminate defects in the exposed surface of the silicon substrate and sidewalls of the defined gate electrode that occur as a result of the etch of the layer of gate material. Then gate spacers are formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile