The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Jul. 17, 2003
Sangheon Lee, San Jose, CA (US);
Sean S. Kang, Fremont, CA (US);
S M Reza Sadjadi, Saratoga, CA (US);
Subhash Deshmukh, Vancouver, WA (US);
Ji Soo Kim, Pleasanton, CA (US);
Sangheon Lee, San Jose, CA (US);
Sean S. Kang, Fremont, CA (US);
S M Reza Sadjadi, Saratoga, CA (US);
Subhash Deshmukh, Vancouver, WA (US);
Ji Soo Kim, Pleasanton, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for processing substrate to form a semiconductor device is disclosed. The substrate includes an etch stop layer disposed above a metal layer. The method includes etching through the etch stop layer down to the copper metal layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in the etch stop layer. The etch stop layer includes at least one of a SiN and SiC material. Thereafter, the method includes performing a wet treatment on the substrate using a solution that contains acetic acid (CHCOOH) or acetic acid/ammonium hydroxide (NHOH) to remove at least some of the copper oxides. Alternatively, the copper oxides may be removed using a Hplasma. BTA passivation may be optionally performed on the substrate.