The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Sep. 16, 2004
Luona Goh, Singapore 460108, SG;
Simon Chooi, Singapore 738406, SG;
Siew Lok Toh, Singapore 119260, SG;
Tong Earn Tay, Singapore 119260, SG;
Luona Goh, Singapore 460108, SG;
Simon Chooi, Singapore 738406, SG;
Siew Lok Toh, Singapore 119260, SG;
Tong Earn Tay, Singapore 119260, SG;
Other;
Abstract
Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.