The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Feb. 23, 2004
Yi MA, Santa Clara, CA (US);
Khaled Z. Ahmed, Anaheim, CA (US);
Kevin L. Cunningham, Mountain View, CA (US);
Robert C. Mcintosh, San Jose, CA (US);
Abhilash J. Mayur, Salinas, CA (US);
Haifan Liang, Oakland, CA (US);
Mark Yam, Monte Sereno, CA (US);
Toi Yue Becky Leung, Sunnyvale, CA (US);
Christopher Olsen, Fremont, CA (US);
Shulin Wang, Campbell, CA (US);
Majeed Foad, Sunnyvale, CA (US);
Gary Eugene Miner, Fremont, CA (US);
Yi Ma, Santa Clara, CA (US);
Khaled Z. Ahmed, Anaheim, CA (US);
Kevin L. Cunningham, Mountain View, CA (US);
Robert C. McIntosh, San Jose, CA (US);
Abhilash J. Mayur, Salinas, CA (US);
Haifan Liang, Oakland, CA (US);
Mark Yam, Monte Sereno, CA (US);
Toi Yue Becky Leung, Sunnyvale, CA (US);
Christopher Olsen, Fremont, CA (US);
Shulin Wang, Campbell, CA (US);
Majeed Foad, Sunnyvale, CA (US);
Gary Eugene Miner, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.