The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Nov. 10, 2003
Katherina E. Babich, Chappaqua, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
David V. Horak, Essex Junction, VT (US);
Arpan P. Mahorowala, Bronxville, NY (US);
Wesley C. Natzle, New Paltz, NY (US);
Dirk Pfeiffer, Dobbs Ferry, NY (US);
Hongwen Yan, Somers, NY (US);
Katherina E. Babich, Chappaqua, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
David V. Horak, Essex Junction, VT (US);
Arpan P. Mahorowala, Bronxville, NY (US);
Wesley C. Natzle, New Paltz, NY (US);
Dirk Pfeiffer, Dobbs Ferry, NY (US);
Hongwen Yan, Somers, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for generating a nanostructure and for enhancing etch selectivity, and a nanostructure are disclosed. The invention implements a tunable etch-resistant anti-reflective (TERA) material integration scheme which gives high etch selectivity for both etching pattern transfer through the TERA layer (used as an ARC and/or hardmask) with etch selectivity to the patterned photoresist, and etching to pattern transfer through a dielectric layer of nitride. This is accomplished by oxidizing a TERA layer after etching pattern transfer through the TERA layer to form an oxidized TERA layer having chemical properties similar to oxide. The methods provide all of the advantages of the TERA material and allows for high etch selectivity (approximately 5–10:1) for etching to pattern transfer through nitride. In addition, the methodology reduces LER and allows for trimming despite reduced photoresist thickness.