The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Mar. 31, 2004
Kazuhito Nakamura, Yamanashi, JP;
Hideaki Yamasaki, Yamanashi, JP;
Yumiko Kawano, Yamanashi, JP;
Gert J. Leusink, Saltpoint, NY (US);
Fenton R. Mcfeely, Ossinging, NY (US);
John J. Yurkas, Stamford, CT (US);
Vijay Narayanan, New York, NY (US);
Kazuhito Nakamura, Yamanashi, JP;
Hideaki Yamasaki, Yamanashi, JP;
Yumiko Kawano, Yamanashi, JP;
Gert J. Leusink, Saltpoint, NY (US);
Fenton R. McFeely, Ossinging, NY (US);
John J. Yurkas, Stamford, CT (US);
Vijay Narayanan, New York, NY (US);
Tokyo Electron Limited, Tokyo, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH))(NC(CH)(CH))) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.