The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2006

Filed:

Jan. 30, 2004
Applicants:

Wei Liu, San Jose, CA (US);

Jim Zhongyi He, Sunnyvale, CA (US);

Sang H. Ahn, Foster City, CA (US);

Meihua Shen, Fremont, CA (US);

Hichem M'saad, Santa Clara, CA (US);

Wendy H. Yeh, Mountain View, CA (US);

Chistopher D. Bencher, San Jose, CA (US);

Inventors:

Wei Liu, San Jose, CA (US);

Jim Zhongyi He, Sunnyvale, CA (US);

Sang H. Ahn, Foster City, CA (US);

Meihua Shen, Fremont, CA (US);

Hichem M'Saad, Santa Clara, CA (US);

Wendy H. Yeh, Mountain View, CA (US);

Chistopher D. Bencher, San Jose, CA (US);

Assignee:

Applied Materials, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.


Find Patent Forward Citations

Loading…