The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Dec. 16, 2003
Wai Lo, Lake Oswego, OR (US);
Verne Hornback, Camas, WA (US);
Wilbur G. Catabay, Saratoga, CA (US);
Wei-jen Hsia, Saratoga, CA (US);
Sey-shing Sun, Portland, OR (US);
Wai Lo, Lake Oswego, OR (US);
Verne Hornback, Camas, WA (US);
Wilbur G. Catabay, Saratoga, CA (US);
Wei-Jen Hsia, Saratoga, CA (US);
Sey-Shing Sun, Portland, OR (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. According to one embodiment the metal silicate comprises a group IV metal and the dopant is an oxide of one of an alkaline metal and an alkaline earth metal. According to another embodiment the metal silicate comprises a group III metal.