The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Jun. 02, 2003
Jose J. Garcia, Hillsboro, OR (US);
Sven Eric Henrichs, Hillsboro, OR (US);
Jose J. Garcia, Hillsboro, OR (US);
Sven Eric Henrichs, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A mask or reticle includes a focus test area having a pattern of opaque lines, naked lines, and phase shifting lines. A resulting pattern on a wafer exposed through the focus test area may have a first area of the pattern shifted with respect to a second area of the pattern if the lithography system is out of focus. In some implementations, an area of the pattern may contract or expand if the lithography system is out of focus. An out of focus condition may be determined using a registration tool, scanning electron microscope (SEM), or an interferometer tool (OCD). An out of focus condition may be improved using out of focus information.