The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Dec. 18, 2003
Applicants:
How-cheng Tsai, Kaohsiung, TW;
Hung-hsin Liu, HsinChu, TW;
Inventors:
How-Cheng Tsai, Kaohsiung, TW;
Hung-Hsin Liu, HsinChu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 6/00 (2006.01); C25F 1/00 (2006.01); C25F 3/30 (2006.01); C25F 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The process of the present invention comprises reactive ion etching of AlFOoxide deposits on aluminum-containing bond pads using feed gases, such as, SF/CF/Ar or Cl/BCL/Ar. whose active plasma etches the AlFOoxide deposits by physical etching and chemical etching for more complete removal of the AlFOoxide deposits.