The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Sep. 08, 2003
Kwang-hee Lee, Seoul, KR;
Cha-young Yoo, Suwon, KR;
Han-jin Lim, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Suk-jin Chung, Suwon, KR;
Wan-don Kim, Yongin, KR;
Jung-hee Chung, Seoul, KR;
Jin-il Lee, Sungnam, KR;
Kwang-hee Lee, Seoul, KR;
Cha-young Yoo, Suwon, KR;
Han-jin Lim, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Suk-jin Chung, Suwon, KR;
Wan-don Kim, Yongin, KR;
Jung-hee Chung, Seoul, KR;
Jin-il Lee, Sungnam, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2–1 ccm and oxygen at a flow rate of 20–60 sccm, and depositing the ruthenium film at a temperature of 330–430° C. under a pressure of 0.5–5 Torr using chemical vapor deposition (CVD).