The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2006
Filed:
Aug. 13, 2003
Yuichiro Morozumi, Tokyo-To, JP;
Kazuhide Hasebe, Tokyo-To, JP;
Shigeru Nakajima, Tokyo-To, JP;
Haruhiko Furuya, Tokyo-To, JP;
Dong-kyun Choi, Tokyo-To, JP;
Takahito Umehara, Tokyo-To, JP;
Katsushige Harada, Tokyo-To, JP;
Tomonori Fujiwara, Tokyo-To, JP;
Hirotake Fujita, Tokyo-To, JP;
Yuichiro Morozumi, Tokyo-To, JP;
Kazuhide Hasebe, Tokyo-To, JP;
Shigeru Nakajima, Tokyo-To, JP;
Haruhiko Furuya, Tokyo-To, JP;
Dong-Kyun Choi, Tokyo-To, JP;
Takahito Umehara, Tokyo-To, JP;
Katsushige Harada, Tokyo-To, JP;
Tomonori Fujiwara, Tokyo-To, JP;
Hirotake Fujita, Tokyo-To, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.