The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2006

Filed:

Jan. 21, 2003
Applicants:

Xingcai Su, Fremont, CA (US);

BI Ming Yen, Fremont, CA (US);

Peter Loewenhardt, Pleasanton, CA (US);

Inventors:

Xingcai Su, Fremont, CA (US);

Bi Ming Yen, Fremont, CA (US);

Peter Loewenhardt, Pleasanton, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor chip formed on a substrate is provided. An oxygen-doped silicon carbide etch stop layer is formed over the substrate. An organosilicate glass layer is formed over the oxygen-doped silicon carbide etch stop layer. A feature is selectively etched in the organosilicate glass layer using an etch with an organosilicate glass to oxygen-doped silicon carbide selectivity greater than 5:1.


Find Patent Forward Citations

Su, Xingcai. (2006). Method for selectively etching organosilicate glass with respect to a doped silicon carbide (U.S. Patent No. 7041230). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7041230

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…