The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Aug. 31, 2004
Naoto Tsuji, Tama, JP;
Yozo Ikedo, Tama, JP;
Ryu Nakano, Tama, JP;
Shuzo Hebiguchi, Tama, JP;
ASM Japan K.K., Tokyo, JP;
Abstract
A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiHas a silicon source gas, SiFas a fluorine source gas, and COas an oxidizing gas to a reaction chamber at a ratio of (SiH+SiF)/COin the range of 0.02 to 0.2 and at a total pressure of 250 Pa to 350 Pa; applying first RF power at a frequency of 10 MHz to 30 MHz and second RF power at a frequency of 400 kHz to 500 kHz by overlaying the two RF powers to generate a plasma reaction field within the reaction chamber; and controlling a flow of the respective gases and the respective RF power outputs.