The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2006

Filed:

Jul. 01, 2002
Applicants:

Satoshi Shibata, Toyama, JP;

Junji Hirase, Osaka, JP;

Tatsuo Sugiyama, Osaka, JP;

Emi Kanasaki, Toyama, JP;

Fumitoshi Kawase, Toyama, JP;

Yasushi Naito, Osaka, JP;

Inventors:

Satoshi Shibata, Toyama, JP;

Junji Hirase, Osaka, JP;

Tatsuo Sugiyama, Osaka, JP;

Emi Kanasaki, Toyama, JP;

Fumitoshi Kawase, Toyama, JP;

Yasushi Naito, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01N 25/00 (2006.01); G01J 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

When the emissivity ε on the reverse face of a substrateis measured during annealing processing for the substratefilms made from a material that varies the emissivity ε, such as a first DPS filmused for forming a plugA, a second DPS filmused for forming a capacitor lower electrodeA and a third DPS filmused for forming a capacitor upper electrodeA, are formed on the top face of the substrateOn the other hand, no film made from a material that varies the emissivity ε, such as a DPS film, is formed on the reverse face of the substrate


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