The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
May. 23, 2001
Ajit P. Paranjpe, Fremont, CA (US);
Sanjay Gopinath, Fremont, CA (US);
Thomas R. Omstead, Fremont, CA (US);
Randhir S. Bubber, San Ramon, CA (US);
Ming Mao, Pleasanton, CA (US);
Ajit P. Paranjpe, Fremont, CA (US);
Sanjay Gopinath, Fremont, CA (US);
Thomas R. Omstead, Fremont, CA (US);
Randhir S. Bubber, San Ramon, CA (US);
Ming Mao, Pleasanton, CA (US);
Veeco Instruments, Inc., Woodbury, NY (US);
Abstract
An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses to obtain desired intrinsic film stress and breakdown film strength. The primary advantage of the ALD process is the near 100% step coverage with properties that are uniform along sidewalls. The process provides smooth (R˜2 Å), pure (impurities<1 at. %), AlOfilms with improved breakdown strength (9–10 MV/cm) with a commercially feasible throughput.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile