The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Jan. 26, 2005
Vitali Souchkov, Walnut Creek, CA (US);
Vladimir Faifer, San Jose, CA (US);
Victor Huang, San Jose, CA (US);
Eugene Fukshansky, Mountain View, CA (US);
Alexander Artjomov, Moscow Region, RU;
Anatoli Skljarnov, Moscow, RU;
Vitali Souchkov, Walnut Creek, CA (US);
Vladimir Faifer, San Jose, CA (US);
Victor Huang, San Jose, CA (US);
Eugene Fukshansky, Mountain View, CA (US);
Alexander Artjomov, Moscow Region, RU;
Anatoli Skljarnov, Moscow, RU;
Ahbee 2, L.P., A California Limited Partnership, San Jose, CA (US);
Abstract
The invention relates to metrology of thin dielectric layers on semiconductor wafers, interfaces of dielectric layers to the wafer substrates and substrates properties of semiconductor wafers. The invention allows measurement of the metrology data for thin dielectric layers on semiconductor wafers electrically via using contact electrodes that align their contact surface to the wafer surface locally at the measurement sites.