Moscow, Russia

Anatoli Skljarnov

This inventor holds 1 USPTO granted patent. Top assignee: Ahbee 2, L.p., a California Limited Partnership. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anatoli Skljarnov. Retrieved from https://idiyas.com/inventor/anatoli-skljarnov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: The Innovations of Anatoli Skljarnov

Introduction

Anatoli Skljarnov is a notable inventor based in Moscow, Russia. He has made significant contributions to the field of metrology, particularly in the measurement of thin dielectric layers on semiconductor wafers. His innovative approach has the potential to enhance the accuracy and efficiency of semiconductor manufacturing processes.

Latest Patents

Anatoli holds a patent for an "Apparatus for measuring of thin dielectric layer properties on semiconductor wafers with contact self-aligning electrodes." This invention relates to the metrology of thin dielectric layers on semiconductor wafers, focusing on the interfaces of dielectric layers to wafer substrates and the properties of semiconductor wafers. The apparatus allows for the electrical measurement of metrology data for thin dielectric layers using contact electrodes that align their surfaces to the wafer surface at specific measurement sites.

Career Highlights

Anatoli Skljarnov has established himself as a key figure in the field of semiconductor technology. His work has been instrumental in advancing the understanding and measurement of dielectric layers, which are critical in the performance of semiconductor devices. He is currently associated with Ahbee 2, L.P., a California Limited Partnership, where he continues to innovate and contribute to the industry.

Collaborations

Anatoli has collaborated with several professionals in his field, including Vitali Souchkov and Vladimir Faifer. These collaborations have fostered a productive environment for innovation and have led to advancements in semiconductor metrology.

Conclusion

Anatoli Skljarnov's contributions to the field of semiconductor technology through his innovative patent and collaborations highlight his importance as an inventor. His work continues to influence the industry and pave the way for future advancements in metrology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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