The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Sep. 29, 2004
Moris Kori, Palo Alto, CA (US);
Alfred W. Mak, Union City, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Lawrence Chung-lai Lei, Milpitas, CA (US);
Hua Chung, San Jose, CA (US);
Ashok Sinha, Palo Alto, CA (US);
Ming Xi, Milpitas, CA (US);
Moris Kori, Palo Alto, CA (US);
Alfred W. Mak, Union City, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Lawrence Chung-Lai Lei, Milpitas, CA (US);
Hua Chung, San Jose, CA (US);
Ashok Sinha, Palo Alto, CA (US);
Ming Xi, Milpitas, CA (US);
Applied Materials. Inc., Santa Clara, CA (US);
Abstract
A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.