The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2006

Filed:

Jul. 01, 2002
Applicants:

Jörg Rottstegge, Erlangen, DE;

Christian Eschbaumer, Schwaig, DE;

Christoph Hohle, Bubenreuth, DE;

Waltraud Herbst, Uttenreuth, DE;

Inventors:

Jörg Rottstegge, Erlangen, DE;

Christian Eschbaumer, Schwaig, DE;

Christoph Hohle, Bubenreuth, DE;

Waltraud Herbst, Uttenreuth, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

The chemically amplified resist includes a film-forming polymer, a photoacid generator, and a solvent. The film-forming polymer contains acid-labile groups which are eliminated under the action of an acid and liberate a group which brings about an increase in the solubility of the polymer in aqueous alkaline developers. The film-forming polymer has polymer building blocks derived from monomers which are at least monofluorinated and contain an anchor group for the attachment of an amplifying agent. As a result of the fluorination of the polymer building blocks, the transparency of the resist at an exposing wavelength of 157 nm is substantially increased, so that resist structures of increased layer thickness can be represented.


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